Device and circuit simulation of anomalous DX trap effects in DCFL and SCFL HEMT inverters
نویسندگان
چکیده
An integrated device and circuit analysis has been developed to evaluate the DX trap induced anomalous transient phenomena in DCFL and SCFL AlGaAs/GaAs HEMT inverters. The slow transient effect and the hysteretic characteristics of the input-output voltage transfer function in the inverters are simulated. The result shows that in comparison with the DCFL inverter, the DX trap effects are much improved in the SCFL inverter due to its particular operational principle.
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ورودعنوان ژورنال:
- IEEE Trans. on CAD of Integrated Circuits and Systems
دوره 12 شماره
صفحات -
تاریخ انتشار 1993